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1 rf device data freescale semiconductor rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for class a or class ab general purpose applications with frequencies from 1600 to 2200 mhz. suitable for analog and digital modulation and multipurpose amplifier applications. ? typical two - tone performance @ 2170 mhz: v dd = 28 volts, i dq = 130 ma, p out = 10 watts pep power gain ? 15.5 db drain efficiency ? 36% imd ? - 34 dbc ? typical 2 - carrier w - cdma performance: v dd = 28 volts, i dq = 130 ma, p out = 1 watt avg., full frequency band (2130 - 2170 mhz), channel bandwidth = 3.84 mhz. par = 8.5 db @ 0.01% probability power gain ? 15.5 db drain efficiency ? 15% im3 @ 10 mhz offset ? - 47 dbc in 3.84 mhz channel bandwidth acpr @ 5 mhz offset ? - 49 dbc in 3.84 mhz channel bandwidth ? typical single - carrier n - cdma performance: v dd = 28 volts, i dq = 130 ma, p out = 1 watt avg., full frequency band (1930 - 1990 mhz), is - 95 (pilot, sync, paging, traffic codes 8 through 13), channel band- width = 1.2288 mhz. par = 9.8 db @ 0.01% probability on ccdf. power gain ? 15.5 db drain efficiency? 16% acpr @ 885 khz offset = - 60 dbc in 30 khz bandwidth ? typical gsm edge performance: v dd = 28 volts, i dq = 130 ma, p out = 4 watts avg., full frequency band (1805 - 1880 mhz) power gain ? 16 db drain efficiency ? 33% evm ? 1.3% rms ? capable of handling 5:1 vswr, @ 28 vdc, 2000 mhz, 10 watts cw output power features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? 200 c capable plastic package ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +68 vdc gate - source voltage v gs - 0.5, +12 vdc storage temperature range t stg - 65 to +175 c operating junction temperature t j 200 c document number: mrf6s20010n rev. 1, 5/2006 freescale semiconductor technical data 1600 - 2200 mhz, 10 w, 28 v gsm/gsm edge single n - cdma 2 x w - cdma lateral n - channel rf power mosfets mrf6s20010nr1 MRF6S20010GNR1 case 1265 - 08, style 1 to - 270 - 2 plastic mrf6s20010nr1 case 1265a - 02, style 1 to - 270 - 2 gull plastic MRF6S20010GNR1 ? freescale semiconductor, inc., 2006. all rights reserved.
2 rf device data freescale semiconductor mrf6s20010nr1 MRF6S20010GNR1 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case case temperature 78 c, 1 w cw case temperature 79 c, 10 w pep, two - tone test r jc 2.5 5.9 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1a (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 68 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 500 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 40 adc) v gs(th) 1.5 2.2 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 130 madc, measured in functional test) v gs(q) 2 2.8 4 vdc drain - source on - voltage (v gs = 10 vdc, i d = 0.4 adc) v ds(on) ? 0.33 0.4 vdc dynamic characteristics (3) input capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 0.12 ? pf output capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 0.02 ? pf reverse transfer capacitance (v ds = 28 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 11.6 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 130 ma, p out = 10 w pep, f1 = 2170 mhz, f2 = 2170.1 mhz, two - tone test power gain g ps 14 15.5 17 db drain efficiency d 33 36 ? % intermodulation distortion imd ? -34 -28 dbc input return loss irl ? -15 -9 db 1. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. 3. part internally matched on input. (continued)
mrf6s20010nr1 MRF6S20010GNR1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical 2 - carrier w - cdma performances (in freescale cdma test fixture, 50 ohm system) v dd = 28 vdc, i dq = 130 ma, p out = 1 w avg., f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz, 2 - carrier w - cdma, 3.84 mhz channel bandwidth carriers. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf. power gain g ps ? 15.5 ? db drain efficiency d ? 15 ? % gain flatness in 30 mhz bandwidth @ p out = 1 w cw g f ? 0.3 ? db intermodulation distortion im3 ? -47 ? dbc adjacent channel power ratio acpr ? -49 ? dbc typical n - cdma performances (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq = 130 ma, p out = 1 w avg., 1930 mhz 4 rf device data freescale semiconductor mrf6s20010nr1 MRF6S20010GNR1 figure 1. mrf6s20010nr1(gnr1) test circuit schematic ? 2110 - 2170 mhz z10 0.930 x 0.350 microstrip z11 0.930 x 0.400 microstrip z12 0.050 x 0.105 microstrip z13 0.405 x 0.242 microstrip z14 0.066 x 0.740 microstrip z16, z17 0.050 x 1.250 microstrip pcb taconic rf - 35, 0.030 , r = 3.5 z1, z15 0.066 x 0.480 microstrip z2 0.066 x 0.765 microstrip z3, z5 0.066 x 0.340 x 0.050 taper z4 0.340 x 0.295 microstrip z6 0.020 x 0.060 microstrip z7 0.0905 x 0.280 microstrip z8 0.0905 x 0.330 microstrip z9 0.050 x 0.980 microstrip rf output v bias v supply rf input dut z1 c2 r1 c11 + c1 c7 r2 z9 r3 z2 z3 z4 z5 z6 z7 z8 z10 z16 c3 c4 c5 z11 z12 z13 z14 c6 z15 z17 c8 c9 c10 table 6. mrf6s20010nr1(gnr1) test circuit component designations and values ? 2110 - 2170 mhz part description part number manufacturer c1 100 nf chip capacitor (1206) cdr33bx104akws kemet c2, c6 4.7 pf 600b chip capacitors 600b4r7cw atc c3, c7, c8 9.1 pf 600b chip capacitors 600b9r1cw atc c4, c5, c9, c10 10 f, 50 v chip capacitors grm55dr61h106ka88b murata c11 10 f, 35 v tantalum chip capacitor t490d106k035as kemet r1 1 k chip resistor (1206) r2 10 k chip resistor (1206) r3 10 chip resistor (1206)
mrf6s20010nr1 MRF6S20010GNR1 5 rf device data freescale semiconductor figure 2. mrf6s20010nr1(gnr1) test circuit component layout ? 2110 - 2170 mhz cut out area r1 c11 r2 c1 c7 r3 c2 c3 c4 c5 c6 c8 c9 c10 mrf6s20010n, rev. 2
6 rf device data freescale semiconductor mrf6s20010nr1 MRF6S20010GNR1 typical characteristics ? 2110 - 2170 mhz 2210 16 40 2050 ?40 ?5 irl g ps imd f, frequency (mhz) v dd = 28 vdc, p out = 10 w (pep) i dq = 130 ma, 100 khz tone spacing 36 ?10 32 ?15 28 24 ?20 ?25 20 ?30 2130 2170 figure 3. two - tone wideband performance @ p out = 10 watts (pep) p out , output power (watts) pep 11 18 1 i dq = 195 ma v dd = 28 vdc, f = 2170 mhz two ?tone measurements 100 khz tone spacing 17 14 12 10 30 figure 4. two - tone power gain versus output power 30 ?60 ?10 0.1 1 10 ?20 ?30 ?40 ?50 p out , output power (watts) pep figure 5. third order intermodulation distortion versus output power g ps , power gain (db) irl, input return loss (db) imd, intermodulation distortion (dbc) 10 ?70 ?10 0.1 7th order v dd = 28 vdc, i dq = 130 ma f1 = 2170 mhz, f2 = 2170.1 mhz two ?tone measurements 5th order 3rd order ?20 ?30 ?40 130 figure 6. intermodulation distortion products versus output power imd, intermodulation distortion (dbc) 2090 15 65 ma 130 ma ?50 ?35 0.1 d , drain efficiency (%), g ps , power gain (db) d 16 13 97.5 ma 162.5 ma intermodulation distortion (dbc) imd, third order 130 ma 97.5 ma 195 ma 10 ?55 ?30 0.1 7th order two ?tone spacing (mhz) v dd = 28 vdc, p out = 10 w (pep) i dq = 130 ma, two ?tone measurements (f1 + f2)/2 = center frequency of 2170 mhz 5th order 3rd order ?35 ?40 ?45 1 100 figure 7. intermodulation distortion products versus tone spacing imd, intermodulation distortion (dbc) ?50 p out , output power (watts) pep ?60 v dd = 28 vdc, f = 2170 mhz two ?tone measurements 100 khz tone spacing 162.5 ma i dq = 65 ma
mrf6s20010nr1 MRF6S20010GNR1 7 rf device data freescale semiconductor typical characteristics ? 2110 - 2170 mhz 30 47 p3db = 41.5 dbm (14.2 w) p in , input power (dbm) v dd = 28 vdc, i dq = 130 ma pulsed cw, 8 sec(on), 1 msec(off) f = 2170 mhz 45 43 41 39 35 22 24 26 actual ideal 28 20 figure 8. pulse cw output power versus input power p out , output power (dbm) p1db = 40.9 dbm (12.26 w) 30 11 18 0.1 0 70 t c = ?30 c 25 c ?30 c 10 1 16 15 14 12 50 40 20 10 p out , output power (watts) cw figure 9. power gain and drain efficiency versus cw output power g ps , power gain (db) g ps 85 c 25 c 85 c v dd = 28 vdc i dq = 130 ma f = 2170 mhz d d , drain efficiency (%) p out , output power (watts) cw figure 10. power gain versus output power 16 v i dq = 130 ma f = 2170 mhz v dd = 12 v 10 16 018 13 11 14 6912 g ps , power gain (db) 21 15 3 20 v 24 v 28 v 32 v ?36 27 400 ?15 6 s21 f, frequency (mhz) figure 11. broadband frequency response s11 18 3 90 0 ?3 ?18 ?6 ?27 ?12 3200 2800 2400 2000 1600 1200 800 v dd = 28 vdc p out = 10 w (pep) i dq = 130 ma s11 (db) s21 (db) 37 17 13 60 30 15 12 ?9 ?9 210 10 8 90 t j , junction temperature ( c) figure 12. mttf factor versus junction temperature this above graph displays calculated mttf in hours x ampere 2 drain current. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mttf factor by i d 2 for mttf in a particular application. 10 7 10 6 10 5 120 140 160 180 190 mttf factor (hours x amps 2 ) 100 200 170 150 130 110
8 rf device data freescale semiconductor mrf6s20010nr1 MRF6S20010GNR1 w - cdma typical characteristics ? 2110 - 2170 mhz g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) ?18 ?10 ?12 ?16 2220 2060 irl g ps acpr im3 f, frequency (mhz) figure 13. 2 - carrier w - cdma broadband performance @ p out = 1 watt avg. 2200 2180 2160 2140 2120 2100 2080 16 ?55 18 17 16 15 ?45 ?47 ?49 d , drain efficiency (%) 15.8 15.6 15.4 15.2 15 14.8 14.6 ?51 ?14 14 d v dd = 28 vdc, p out = 1 w (avg.), i dq = 130 ma 2?carrier w?cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) 14.4 14.2 14 ?53 im3 (dbc), acpr (dbc) figure 14. 2 - carrier w - cdma acpr, im3, power gain and drain efficiency versus output power 0 ?55 p out , output power (watts) avg. 49 ?20 ?30 35 28 ?35 14 120 ?40 im3 g ps d , drain efficiency (%), g ps , power gain (db) 42 ?45 d acpr 0.1 ?25 21 t c = 25 c v dd = 28 vdc, i dq = 130 ma f1 = 2165 mhz, f2 = 2175 mhz 2?carrier w?cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probability (ccdf) 7?50 10
mrf6s20010nr1 MRF6S20010GNR1 9 rf device data freescale semiconductor w - cdma test signal 10 0.0001 100 0 peak ?to?average (db) figure 15. ccdf w - cdma 3gpp, test model 1, 64 dpch, 67% clipping, single - carrier test signal 10 1 0.1 0.01 0.001 24 68 figure 16. 2-carrier w-cdma spectrum f, frequency (mhz) 3.84 mhz channel bw ?im3 in 3.84 mhz bw +im3 in 3.84 mhz bw ?acpr in 3.84 mhz bw +acpr in 3.84 mhz bw probability (%) (db) +20 +30 0 ?10 ?40 ?50 ?60 ?70 ?80 ?20 20 515 10 0 ?5 ?10 ?15 ?20 ?25 2 5 ?30 w?cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf
10 rf device data freescale semiconductor mrf6s20010nr1 MRF6S20010GNR1 n - cdma typical characteristics ? 1930 - 1990 mhz rf output v bias v supply rf input dut z1 c2 r1 c11 + c1 c7 r2 z7 r3 z2 z3 z4 z5 z6 z8 z17 c3 c4 c5 z11 z12 z13 z14 c6 z16 z18 c8 c9 c10 z9 z10 z15 figure 17. mrf6s20010nr1(gnr1) test circuit schematic ? 1930 - 1990 mhz z11 0.244 x 0.423 microstrip z12 0.244 x 0.066 x 0.089 taper z13 0.066 x 0.182 microstrip z14 0.066 x 0.263 microstrip z15 0.236 x 0.118 microstrip z16 0.066 x 0.099 microstrip z17, z18 0.050 x 1.250 microstrip pcb taconic rf - 35, 0.030 , r = 3.5 z1 0.066 x 0.480 microstrip z2 0.066 x 0.728 microstrip z3 0.354 x 0.512 microstrip z4 0.066 x 0.079 microstrip z5, z6 0.591 x 0.335 microstrip z7 0.050 x 0.980 microstrip z8 1.142 x 0.350 microstrip z9 1.142 x 0.516 microstrip z10 0.433 x 0.276 microstrip table 7. mrf6s20010nr1(gnr1) test circuit component designations and values ? 1930 - 1990 mhz part description part number manufacturer c1 100 nf chip capacitor (1206) 1206c104kat avx c2, c6 4.7 pf 600b chip capacitors 600b4r7bw atc c3, c7, c8 9.1 pf 600b chip capacitors 600b9r1bw atc c4, c5, c9, c10 10 f chip capacitors (2220) c5750x5r1h106mt tdk c11 10 f, 35 v tantalum chip capacitor tajd106k035 avx r1, r2 10 k chip resistors (1206) r3 10 chip resistor (1206)
mrf6s20010nr1 MRF6S20010GNR1 11 rf device data freescale semiconductor n - cdma typical characteristics ? 1930 - 1990 mhz figure 18. mrf6s20010nr1(gnr1) test circuit component layout ? 1930 - 1990 mhz mrf6s20010n rev 0 cut out area c11 v dd v gs r1 r2 c1 c7 r3 c2 c3 c4 c5 c6 c9 c10 c8
12 rf device data freescale semiconductor mrf6s20010nr1 MRF6S20010GNR1 n - cdma typical characteristics ? 1930 - 1990 mhz g ps , power gain (db) irl, input return loss (db) acpr (dbc) ?20 ?8 ?11 ?17 2000 1900 g ps acpr f, frequency (mhz) figure 19. single - carrier n - cdma broadband performance @ p out = 1 watt avg. 1970 1960 1950 1940 1930 1920 1910 15.9 ?61 19 18 17 16 ?59.4 ?59.8 d , drain efficiency (%) 15.8 15.7 15.6 15.5 15.3 ?60.2 ?14 14.9 d v dd = 28 vdc, p out = 1 w (avg.), i dq = 500 ma n?cdma is?95 (pilot, sync, paging, traffic codes 8 through 13) 15.1 15 ?60.6 15.4 15.2 15 1980 1990 irl ?59 acpr (dbc) figure 20. single - carrier n - cdma acpr and drain efficiency versus output power 0 ?65 p out , output power (watts) avg. 50 ?40 ?50 30 ?55 20 1 d , drain efficiency (%) 40 d acpr 0.1 ?45 v dd = 28 vdc, i dq = 130 ma f = 1960 mhz, n?cdma is?95 (pilot, sync, paging, traffic codes 8 through 13) 10 ?60 10
mrf6s20010nr1 MRF6S20010GNR1 13 rf device data freescale semiconductor n - cdma test signal 10 0.0001 100 0 peak ?to?average (db) figure 21. single - carrier ccdf n - cdma 10 1 0.1 0.01 0.001 2468 is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carriers. acpr measured in 30 khz bandwidth @ 885 khz offset. alt1 measured in 12.5 khz bandwidth @ 1.25 m hz offset. par = 9.8 db @ 0.01% probability on ccdf. probability (%) . . . . . . .. . . . . . .. . . . . . . .. . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . ... . . .. . .. . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . .. . . .. . . . . . . . . . .. . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . .. . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . .. . . . . . . .... . . . . . . . ... . . . ... .. .. . .. . .. . . . . . . . . ... . . . . ... . . . . . . . . . . .. ... . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . ... ... . . . .. . . . . . . . . . . . . . . . . .. . . . . . . . . . .. .. .. ... . . . . . .. ... . . . . . .. . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . .. . . . . . . . . . . . . . .. . . .. . . . . . . . . . . . . . . . . .. . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .. . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .. . . . .. . .. ... . . . . . .... . . . . . . . . .. . . . . . . . . . . . . . . . . . . ?60 ?110 ?10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 ?100 +acpr in 30 khz integrated bw 1.2288 mhz channel bw 2.9 0.7 2.2 1.5 0 ?0.7 ?1.5 ?2.2 ?2.9 ?3.6 3.6 f, frequency (mhz) figure 22. single - carrier n - cdma spectrum ?acpr in 30 khz integrated bw ?alt1 in 12.5 khz integrated bw +alt1 in 12.5 khz integrated bw
14 rf device data freescale semiconductor mrf6s20010nr1 MRF6S20010GNR1 gsm edge typical characteristics ? 1805 - 1880 mhz rf output v bias v supply rf input dut z1 c2 r1 c11 + c1 c7 r2 z9 r3 z2 z3 z4 z5 z8 z10 z17 c3 c4 c5 z11 z12 z13 z14 c6 z16 z18 c8 c9 c10 z15 figure 23. mrf6s20010nr1(gnr1) test circuit schematic ? 1805 - 1880 mhz z10 1.142 x 0.350 microstrip z11 1.142 x 0.516 microstrip z12 0.433 x 0.276 microstrip z13 0.276 x 0.157 microstrip z14 0.236 x 0.433 microstrip z15 0.066 x 0.104 microstrip z17, z18 0.050 x 1.250 microstrip pcb taconic rf - 35, 0.030 , r = 3.5 z1, z16 0.066 x 0.480 microstrip z2 0.066 x 0.137 microstrip z3 0.236 x 0.236 microstrip z4 0.066 x 0.354 microstrip z5 0.551 x 0.512 microstrip z6 0.066 x 0.079 microstrip z7 0.591 x 0.189 microstrip z8 0.591 x 0.334 microstrip z9 0.050 x 0.980 microstrip z7 z6 table 8. mrf6s20010nr1(gnr1) test circuit component designations and values ?1805 - 1880 mhz part description part number manufacturer c1 100 nf chip capacitor (1206) 1206c104kat avx c2, c6 4.7 pf 600b chip capacitors 600b4r7bw atc c3, c7, c8 9.1 pf 600b chip capacitors 600b9r1bw atc c4, c5, c9, c10 10 f chip capacitors (2220) c5750x5r1h106mt tdk c11 10 f, 35 v tantalum chip capacitor tajd106k035 avx r1, r2 10 k chip resistors (1206) r3 10 chip resistor (1206)
mrf6s20010nr1 MRF6S20010GNR1 15 rf device data freescale semiconductor gsm edge typical characteristics ? 1805 - 1880 mhz figure 24. mrf6s20010nr1(gnr1) test circuit component layout ? 1805 - 1880 mhz mrf6s20010n rev. 0 cut out area c11 v dd v gs r1 r2 c1 c7 r3 c2 c3 c4 c5 c6 c9 c10 c8
16 rf device data freescale semiconductor mrf6s20010nr1 MRF6S20010GNR1 gsm edge typical characteristics ? 1805 - 1880 mhz g ps , power gain (db) irl, input return loss (db) f, frequency (mhz) 13 1800 10 g ps v dd = 28 vdc i dq = 130 ma 17 50 16 40 15 30 14 20 1900 irl figure 25. power gain, input return loss and drain efficiency versus frequency @ p out = 4 watts ?30 0 ?10 ?20 ?40 d d , drain efficiency (%) 1810 1820 1830 1840 1850 1860 1870 1880 1890 figure 26. error vector magnitude and drain efficiency versus output power p out , output power (watts) avg. 10 2 6 v dd = 28 vdc i dq = 130 ma f = 1840 mhz 4 3 0 1 0.1 1 20 60 40 30 0 10 evm d d , drain efficiency (%) evm, error vector magnitude (% ms) 50 5 10 ?80 ?50 0.1 p out , output power (watts) ?55 ?60 ?65 ?70 ?75 1 v dd = 28 vdc i dq = 130 ma f = 1840 mhz figure 27. spectral regrowth at 400 khz and 600 khz versus output power spectral regrowth (dbc) sr @ 400 khz sr @ 600 khz figure 28. edge spectrum ?10 ?20 ?30 ?40 ?50 ?60 ?70 ?80 ?90 ?100 200 khz span 2 mhz center 1.96 ghz ?110 400 khz 600 khz 400 khz 600 khz (db) reference power vbw = 30 khz sweep time = 70 ms rbw = 30 khz gsm edge test signal
mrf6s20010nr1 MRF6S20010GNR1 17 rf device data freescale semiconductor figure 29. series equivalent source and load impedance z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f = 1880 mhz z o = 25 z load z source f mhz z source z load 1805 1840 1880 13.237 + j5.810 14.858 + j6.279 13.953 + j6.084 2.445 + j3.698 2.542 + j3.942 2.695 + j4.170 v dd = 28 vdc, i dq = 130 ma, p out = 4 w avg. 1800 mhz f mhz z source z load 2110 2140 2170 3.619 + j0.792 4.087 + j0.558 3.918 + j0.797 2.544 + j3.068 2.673 + j3.291 2.818 + j3.406 v dd = 28 vdc, i dq = 130 ma, p out = 10 w pep 2170 mhz f mhz z source z load 1930 1960 1990 9.237 + j1.849 9.889 + j2.434 9.521 + j2.144 2.770 + j3.497 2.754 + j3.668 2.772 + j3.833 v dd = 28 vdc, i dq = 130 ma, p out = 1 w avg. 1900 mhz f = 1805 mhz f = 1805 mhz f = 1880 mhz f = 1930 mhz f = 1990 mhz z load z source z o = 25 f = 1990 mhz f = 1930 mhz f = 2110 mhz z source z load f = 2170 mhz f = 2170 mhz f = 2110 mhz z o = 25
18 rf device data freescale semiconductor mrf6s20010nr1 MRF6S20010GNR1 table 9. common source scattering parameters (v dd = 28 v, i dq = 126 ma, t c = 25 c, 50 ohm system) f mh s 11 s 21 s 12 s 22 mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 500 0.984 - 178.1 1.195 42.42 0.001 - 129.1 0.875 - 116.3 550 0.986 - 179.0 0.947 40.48 0.001 - 159.2 0.892 - 121.6 600 0.985 179.9 0.747 39.66 0.001 147.4 0.905 - 125.9 650 0.986 178.9 0.581 39.89 0.001 119.1 0.913 - 129.9 700 0.982 177.9 0.446 41.80 0.001 108.1 0.927 - 133.4 750 0.983 177.2 0.336 46.70 0.002 102.9 0.935 - 136.4 800 0.983 176.5 0.248 56.02 0.002 96.99 0.941 - 139.5 850 0.979 175.5 0.188 72.74 0.003 97.40 0.947 - 141.9 900 0.980 174.8 0.168 96.69 0.003 94.63 0.951 - 144.4 950 0.977 174.0 0.183 119.3 0.004 91.92 0.955 - 146.6 1000 0.978 173.2 0.223 134.3 0.004 92.80 0.960 - 148.6 1050 0.972 172.4 0.276 142.2 0.004 89.92 0.962 - 150.5 1100 0.972 171.4 0.335 146.4 0.005 89.90 0.966 - 152.2 1150 0.963 170.8 0.396 148.5 0.005 87.51 0.977 - 153.7 1200 0.964 169.9 0.461 148.8 0.006 89.25 0.971 - 155.2 1250 0.956 169.0 0.531 148.2 0.007 86.98 0.977 - 156.8 1300 0.948 167.8 0.604 146.9 0.007 85.08 0.982 - 157.9 1350 0.939 167.0 0.685 144.8 0.008 82.40 0.986 - 159.5 1400 0.927 165.7 0.772 142.2 0.008 79.69 0.988 - 160.7 1450 0.910 164.5 0.869 138.7 0.009 77.79 0.994 - 162.1 1500 0.889 163.2 0.975 134.7 0.010 75.79 0.991 - 163.4 1550 0.861 161.9 1.093 129.7 0.010 72.86 0.993 - 164.7 1600 0.821 160.9 1.221 123.8 0.011 69.89 0.996 - 166.0 1650 0.780 160.1 1.356 116.7 0.012 63.71 0.984 - 167.4 1700 0.722 160.6 1.491 108.3 0.013 57.70 0.985 - 168.5 1750 0.666 162.5 1.606 98.77 0.014 49.85 0.977 - 169.6 1800 0.618 167.0 1.687 88.09 0.014 41.19 0.970 - 170.8 1850 0.603 173.3 1.706 76.98 0.013 32.65 0.958 - 171.3 1900 0.614 179.7 1.673 66.08 0.012 25.40 0.954 - 171.9 1950 0.654 - 175.6 1.591 55.96 0.011 20.73 0.945 - 172.3 2000 0.701 - 173.5 1.484 47.04 0.010 15.11 0.947 - 172.6 2050 0.747 - 172.7 1.364 39.29 0.008 10.13 0.947 - 173.0 2100 0.783 - 172.6 1.242 32.87 0.006 6.333 0.945 - 173.6 2150 0.816 - 172.9 1.136 27.69 0.004 15.63 0.944 - 173.9 2200 0.842 - 173.6 1.042 23.26 0.004 42.20 0.944 - 174.2 2250 0.864 - 174.2 0.961 19.26 0.005 57.76 0.948 - 174.6 2300 0.882 - 175.0 0.888 15.75 0.006 62.56 0.948 - 175.2 2350 0.894 - 175.7 0.822 12.69 0.008 59.72 0.949 - 175.7 2400 0.906 - 176.4 0.764 9.857 0.009 49.09 0.951 - 176.1 2450 0.910 - 176.9 0.712 7.587 0.008 39.24 0.955 - 176.5
mrf6s20010nr1 MRF6S20010GNR1 19 rf device data freescale semiconductor table 9. common source scattering parameters (v dd = 28 v, i dq = 126 ma, t c = 25 c, 50 ohm system) (continued) f mh s 11 s 21 s 12 s 22 mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 2500 0.923 - 177.5 0.666 5.462 0.006 42.56 0.957 - 177.2 2550 0.927 - 178.0 0.625 3.680 0.006 52.25 0.962 - 177.8 2600 0.937 - 178.8 0.591 1.864 0.006 60.26 0.961 - 178.4 2650 0.937 - 179.0 0.559 0.237 0.007 64.14 0.964 - 179.1 2700 0.942 - 179.8 0.529 - 1.378 0.007 65.62 0.964 - 179.6 2750 0.945 - 179.9 0.504 - 2.768 0.007 64.71 0.964 179.7 2800 0.946 179.5 0.479 - 4.088 0.007 67.58 0.966 179.4 2850 0.950 179.3 0.456 - 5.412 0.007 75.44 0.966 178.8 2900 0.949 178.8 0.436 - 6.305 0.008 82.04 0.964 178.3 2950 0.952 178.5 0.419 - 7.279 0.009 83.60 0.967 177.9 3000 0.950 178.4 0.402 - 8.087 0.011 83.41 0.968 177.4 3050 0.958 177.9 0.387 - 9.138 0.012 81.35 0.964 176.8 3100 0.953 177.7 0.373 - 9.904 0.013 77.45 0.969 176.4 3150 0.957 177.2 0.362 - 10.86 0.014 70.98 0.970 176.2 3200 0.960 177.4 0.350 - 11.79 0.013 67.00 0.970 175.5
20 rf device data freescale semiconductor mrf6s20010nr1 MRF6S20010GNR1 package dimensions
mrf6s20010nr1 MRF6S20010GNR1 21 rf device data freescale semiconductor
22 rf device data freescale semiconductor mrf6s20010nr1 MRF6S20010GNR1
mrf6s20010nr1 MRF6S20010GNR1 23 rf device data freescale semiconductor to - 270- 2 gull plastic case 1265a - 02 issue b bottom view 2x e d1 e4 e1 d2 e3 a2 exposed heatsink area a b d h pin one id ????? ????? ????? ????? ????? ????? ????? ????? ????? d a m aaa c a m aaa c 2x b1 2x d3 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. datum plane ?h? is located at top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions ? d1" and ? e1" do not include mold protrusion. allowable protrusion is .006 per side. dimensions ? d1" and ? e1" do include mold mismatch and are deter? mined at datum plane ?h?. 5. dimension b1 does not include dambar protrusion. allowable dambar protrusion shall be .005 total in excess of the b1 dimension at maximum material condition. 6. datums ?a? and ?b? to be determined at datum plane ?h?. 7. dimensions ? d" and ? e2" do not include mold protrusion. allowable protrusion is .003 per side. dimensions ? d" and ? e2" do include mold mismatch and are deter? mined at datum plane ?d?. c1 e2 2x a dim a min max min max millimeters .078 .082 1.98 2.08 inches a1 .001 .004 0.02 0.10 a2 .077 .088 1.96 2.24 d .416 .424 10.57 10.77 d1 .378 .382 9.60 9.70 d2 .290 .320 7.37 8.13 d3 .016 .024 0.41 0.61 e .316 .324 8.03 8.23 e1 .238 .242 6.04 6.15 e2 .066 .074 1.68 1.88 e3 .150 .180 3.81 4.57 e4 .058 .066 1.47 1.68 l1 b1 .193 .199 4.90 5.06 c1 .007 .011 0.18 0.28 aaa .01 bsc .004 0.25 bsc 0.10 pin 1 pin 2 pin 3 style 1: pin 1. drain 2. gate 3. source e 2 8 2 8 l .018 .024 4.90 5.06 detail y seating plane b m bbb c l1 l a1 gage plane e detail y e5 e5 e5 .231 .235 5.87 5.97 MRF6S20010GNR1
24 rf device data freescale semiconductor mrf6s20010nr1 MRF6S20010GNR1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf6s20010n rev. 1, 5/2006

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